elektronische bauelemente SSQF02N60J 2a, 600v, r ds(on) 4.4 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ito - 220 j rohs compliant product a suffix of -c specifies halogen free description the high voltage mosfet uses an advanced terminatio n scheme to provide enhanced voltage-blocking capabil ity without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in aval anche and commutation modes. the new energy efficient des ign also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power suppliers, converters, and pwm motor controls, thes e devices are particularly well suited for bridge circuits wh ose diode speed and commutating safe operating areas are critical a nd offer additional and safety margin against unexpected vol tage transients. features robust high voltage termination specified avalanche energy source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterized for the use in bridge circu its i dss and v ds(on) are specified at the elevated temperature absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 20 v continuous drain current i d 2 a pulsed drain current i dm 9 a power dissipation p d 2 w single pulsed avalanche energy 1 e as 128 mj junction and storage temperature range t j , t stg 150, -55~150 c thermal resistance rating thermal resistance from junction to ambient r ja 62.5 c/ w notes: 1. e as condition: l=64mh, i l =2a, v dd =50v, r g =25 , t j =25c. 1 gate 3 source 2 drain millimeter millimeter ref. min. max . ref. min. max. a 14.80 15.20 h 3.60 4.00 b 9.96 10.36 j 1.30 ref. c 13.20 ref. k 0.50 0.75 d 4.30 4.70 l 2.54 ref. e 2.80 3.20 m 2.70 ref. f 2.50 2.90 n 3.5 ref. g 0.50 0.75
elektronische bauelemente SSQF02N60J 2a, 600v, r ds(on) 4.4 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage b vdss 600 - - v v gs =0, i d =250 a gate-threshold voltage 1 v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current 1 i gss - - 100 na v ds =0v, v gs = 20v drain-source leakage current i dss - - 25 a v ds =600v, v gs =0 static drain-source on-resistance 1 r ds(on) - - 4.4 v gs =10v, i d =1a forward transconductance 1 g fs 1 - - s v ds =50v, i d =1a input capacitance c iss - 435 - output capacitance c oss - 56 - reverse transfer capacitance c rss - 9.2 - pf v ds =25v v gs =0 f=1mhz turn-on delay time t d(on) - 12 - rise time t r - 21 - turn-off delay time t d(off) - 30 - fall time t f - 24 - ns v dd =300v v gs =10v r g =18 i d =2a diode forward voltage 1 v sd - - 1.6 v i s =2a, v gs =0 notes: 1. pulse test : pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSQF02N60J 2a, 600v, r ds(on) 4.4 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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